af4410n n-channel 30-v (d-s) mosfet this datasheet contains new product information. anachip corp. re serves the rights to modify the product specification without notice. no liability is assumed as a result of the use of this product. no rights under any patent accompany the sale of the product. rev. 1.0 jul 16, 2004 1/5 features -low r ds(on) provides higher efficiency and extends battery life -miniature so-8 surface mount package saves board space -high power and current handling capability -low side high current dc-dc converter applications product summary v ds (v) r ds(on) (m ? ) i d (a) 13.5@v gs =10v 10 30 20@v gs =4.5v 8 pin assignments sop-8 5 6 7 8 4 3 2 1 d d d d s s s g general description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwm dc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. pin descriptions pin name description s source g gate d drain ordering information ax 4410n x x x pn package feature f :mosfet s: sop-8 lead free blank : normal l : lead free package packing blank : tube or bulk a : tape & reel
af4410n n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 j ul 16, 2004 2/5 absolute maxi mum ratings (t a =25oc unless otherwise noted) symbol parameter rating units v ds drain-source voltage 30 v v gs gate-source voltage 20 v t a =25oc 10 i d continuous drain current (note 1) t a =70oc 8 a i dm pulsed drain current (note 2) 50 a i s continuous source current (diode conduction) (note 1) 2.3 a t a =25oc 3.1 p d power dissipation (note 1) t a =70oc 2.2 w t j , t stg operating junction and storage temperature range -55 to 150 oc thermal resistance ratings symbol parameter maximum units r jc maximum junction-to-case (note 1) t < 5 sec 25 oc/w r ja maximum junction-to-ambient (note 1) t < 5 sec 50 oc/w note 1: surface mounted on 1?x 1? fr4 board. note 2: pulse width limited by maximum junction temperature specifications (t a =25oc unless otherwise noted) limits symbol parameter test conditions min. typ. max. unit static v (br)dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs(th) gate-threshold voltage v ds = v gs , i d =250ua 1 1.95 3.0 v i gss gate-body leakage v ds =0v, v gs =20v - - 100 na v ds =24v, v gs =0v - - 1 i dss zero gate voltage drain current v ds =24v, v gs =0v, t j =55oc - - 25 ua i d(on) on-state drain current (note 3) v ds =5v, v gs =10v 20 - - a v gs =10v, i d =10a - 11 13.5 v gs =4.5v, i d =8a - 15 20 r ds(on) drain-source on-resistance (note 3) v gs =10v, i d =15a, t j =55oc - 12.5 15 m ? g fs forward tranconductance (note 3) v ds =15v, i d =10a - 40 - s v sd diode forward voltage i s =2.3a, v gs =0v - 0.7 1.1 v dynamic (note 4) q g total gate charge - 20 34 q gs gate-source charge - 7.0 - q gd gate-drain charge v ds =15v, v gs =5v, i d =10a - 7.0 - nc switching t d(on) turn-on delay time - 20 30 t r rise time - 9 20 t d(off) turn-off delay time - 70 102 t f fall-time v dd =25, r l =25 ? , id=1a, vgen=10v - 20 81 t rr source-ddrain reverse recovery time i f =2.3a, di/dt=100a/us - 41 80 ns note 3: pulse test: pw < 300us duty cycle < 2%. note 4: guaranteed by design, not subject to production testing.
af4410n n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 j ul 16, 2004 3/5 typical performance characteristics figure 1. on-region characteristics figure 2. on-resistance with drain current figure 3. on-resistance variation with temperature figure 4. on-resistance variation with gate to source voltage figure 5. transfer characteristics figure 6. body diode forward voltage variation with source current and temperature
af4410n n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 j ul 16, 2004 4/5 typical performance charact eristics (c ontinued) figure 7. gate charge characteristics figure 8. capacitance characteristics figure 9. threshold v.s. ambient temperature figure 10. single pulse maximum power dissipation normalized thermal transient junction to ambient figure 11. transient thermal response curve
af4410n n-channel 30-v (d-s) mosfet anachip corp. www.anachip.com.tw rev. 1.0 j ul 16, 2004 5/5 marking information sop-8l ( top view ) 1 8 4 4 1 0 n aa y w x year code: part number lot code: week code: factory code "a~z": 01~26; "a ~z ": 27~52 "4" =2004 ~ "a~z": 01~26; "a ~z ": 27~52 "x": non-lead free; "x": lead free logo package information package type: sop-8l view "a" l c view "a" h e a a2 a1 b e d 7 (4x) 0.015x45 7 (4x) y dimensions in millimeters dimensions in inches symbol min. nom. max. min. nom. max. a 1.40 1.60 1.75 0.055 0.063 0.069 a1 0.10 - 0.25 0.040 - 0.100 a2 1.30 1.45 1. 50 0.051 0.057 0.059 b 0.33 0.41 0.51 0.013 0.016 0.020 c 0.19 0.20 0.25 0.0075 0.008 0.010 d 4.80 5.05 5.30 0.189 0.199 0.209 e 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - h 5.79 5.99 6.20 0.228 0.236 0.244 l 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004 0 o - 8 o 0 o - 8 o
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